Detailed modelling of inter sub-band absorption in p-doped GaAs quantum wells embedded in GaAs/AlAs superlattice barriers was performed. It was shown that a careful analysis of measurements provided valuable information on the structure details, like the extent of interdiffusion and different sources of line broadening, which could be useful for further design of emitters and detectors based on this and other material systems.

Interdiffusion Effects and Line Broadening of Hole Intersubband Absorption in Complex GaAs/AlGaAs Quantum Well Structures. Z.Ikonić, O.Malis, L.N.Pfeiffer, K.W.West, P.Harrison: Journal of Applied Physics, 2010, 107[11], 113107