An investigation was made of the effect of post-growth-annealing-induced interdiffusion process, and hence interface intermixing, upon the electronic structure of Ga0.35In0.65As0.32Sb0.68/Al0.25Ga0.50In0.25As0.24Sb0.76 single quantum wells designed to emit light in the range of about 3µm. The band structure and optical transitions were calculated based on the single band effective mass model and Fick's interdiffusion law. The calculated results were consistent with the experimentally observed transitions obtained by employing modulation spectroscopy. The studies indicated that the intermixing processes in this kind of quantum wells were predominantly induced by the interdiffusion of group III atoms. The derived effective diffusion coefficient was estimated to be of the order of 10-21m2/s for a 480C annealing temperature.

Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells. K.Ryczko, G.Sęk, M.Motyka, F.Janiak, M.Kubisa, J.Misiewicz, S.Belahsene, G.Boissier, Y.Rouillard: Japanese Journal of Applied Physics, 2011, 50[3], 031202