An experimental investigation was made of the temperature dependence of optical-output power of light-emitting diodes with different threading dislocation densities to assess the influence of the threading dislocation density on the temperature stability of light-emitting diodes. Whereas a light-emitting diode with a high threading dislocation density showed a 64% decrease in optical-output power when the ambient temperature increased from 20 to 150C, a light-emitting diode with a low threading dislocation density showed only a 54% decrease. The temperature dependence of the optical-output power and current dependence of the characteristic temperature Tch of light-emitting diodes showed that short radiative recombination lifetime and low threading dislocation densities were essential to obtain light-emitting diode characteristics that were tolerant of high temperatures.

Temperature-Dependent Light-Output Characteristics of GaInN Light-Emitting Diodes with Different Dislocation Densities. S.Chhajed, J.Cho, E.F.Schubert, J.K.Kim, D.D.Koleske, M.H.Crawford: Physica Status Solidi A, 2011, 208[4], 947–50