Differing behaviours of misfit dislocations were found in a Ga0.83In0.17N single layer and in Ga0.83In0.17N/Ga0.93In0.07N superlattices; both on GaN substrates. In the case of the single layer, misfit dislocations were formed at the GaInN/GaN interfaces and extended through the GaInN layer to the surface. In contrast, the misfit dislocations in the superlattices were bent laterally at interfaces between the Ga0.83In0.17N and Ga0.93In0.07N layers. In addition, most of the dislocations did not reach the surface owing to the formation of dislocation loops. As a result, the dislocation density at the surface of the GaInN superlattice sample was 5 x 107/cm2.

Microstructures of GaInN/GaInN Superlattices on GaN Substrates. T.Sugiyama, Y.Kuwahara, Y.Isobe, T.Fujii, K.Nonaka, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano: Applied Physics Express, 2011, 4[1], 015701