The growth features of c-GaN stripes grown by selective-area metal-organic vapour phase epitaxy on GaAs (001) substrates with stripe patterns aligned along the [110] direction were analysed by using the vapour phase diffusion model including surface migration effects from (111) facets. The addition of surface migration effects was found to improve the correlation between the simulation and experiment for the fill-factors smaller than 0.5. The effects of the surface migration length and the weight of surface migration contribution on the surface profile and the growth rate of the c-GaN stripes were also analysed. An increase in surface migration length was found to enhance strongly the growth rate at the centre of c-GaN stripes, while increasing the weight of the contribution led to growth rate enhancement at the edges of the stripes. The simulation demonstrated that the most probable values of surface migration length and the weight of the contribution were 0.8 µm and 0.13, respectively. According to the simulation, a mechanism of cubic-to-hexagonal structural phase transition was suggested as a cause of the surface concentration profiles.

A Growth Model of Cubic GaN Microstripes Grown by MOVPE: Vapour Phase Diffusion Model Including Surface Migration Effects. P.Sukkaew, S.Sanorpim, K.Onabe: Physica Status Solidi A, 2010, 207[6], 1372–4