An experimental study was made of the identification and quantification of different types of dislocation in GaN grown by low-pressure solution growth. A reliable defect selective etching procedure in a NaOH-KOH melt was developed and validated using transmission electron microscopy; permitting the definition of groups of etch pits that belonged to dislocations having a specific Burgers vector. In this way, a comparably fast method was provided for determining the total density, the specific dislocation densities and the type of dislocation in a statistically representative way.

Selective Etching of Dislocations in GaN Grown by Low-Pressure Solution Growth. I.Y.Knoke, P.Berwian, E.Meissner, J.Friedrich, H.P.Strunk, G.Müller: Journal of Crystal Growth, 2010, 312[20], 3040-5