Defect-related emission bands in GaN were reported. A direct correlation was established between the results for spatially and spectrally resolved cathodoluminescence bands at 3.32, 3.23, 3.20, 3.16 and 3.07 eV, and findings obtained by transmission electron microscopy. The band at around 3.32eV was unambiguously assigned to I2 basal-plane stacking faults. The bands at 3.23, 3.20, 3.16 and 3.07eV were detected in sample regions, where basal-plane stacking faults existed, but were not attributed to specific defect types; except for the 3.07eV line, which was a phonon replica of the transition at 3.16eV.

Stacking Fault-Related Luminescence Features in Semi-Polar GaN. I.Tischer, M.Feneberg, M.Schirra, H.Yacoub, R.Sauer, K.Thonke, T.Wunderer, F.Scholz, L.Dieterle, E.Müller, D.Gerthsen: Physica Status Solidi B, 2011, 248[3], 611–5