Secondary defects induced by ion and electron irradiation up to 6dpa at liquid-nitrogen temperature in GaSb thin films were compared. For Sn ion (60keV) irradiation, voids were observed. However, for high-energy electron (2MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8 x 1014voids/m2 and 3 x 1014loops/m2) after irradiations at the same damage level of 6dpa. It was concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage.

Secondary Defects Induced by Ion and Electron Irradiation of GaSb. N.Nitta, E.Taguchi, H.Yasuda, H.Mori, Y.Hayashi, T.Yoshiie, M.Taniwaki: Philosophical Magazine Letters, 2011, 91[3], 223-8