Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (VGa)-related defects. More VGa-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 x 1017 and 1.0 x 1018/cm2; however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of VGa. The role of Te content in defect evolution was also considered.

Defect Properties of As-Grown and Electron-Irradiated Te-Doped GaSb Studied by Positron Annihilation. H.Li, K.Zhou, J.Pang, Y.Shao, Z.Wang, Y.Zhao: Semiconductor Science and Technology, 2011, 26[7], 075016