A study was made of the thermal boundary conductance across structurally-variant GaSb/GaAs interfaces characterized by various dislocation densities, as well as variably-rough Al/GaSb interfaces. The GaSb/GaAs structures were epitaxially grown using both interfacial misfit and non-interfacial misfit techniques. The thermal boundary conductance from 100 to 450K was measured using time-domain thermoreflectance. The thermal boundary conductance across the GaSb/GaAs interfaces decreased with increasing strain dislocation density. A model for interfacial transport at structurally-variant interfaces was developed in which phonon propagation and scattering parallelled photon attenuation. It was found that this model well described the measured thermal boundary conductances.

Effect of Dislocation Density on Thermal Boundary Conductance across GaSb/GaAs Interfaces. P.E.Hopkins, J.C.Duda, S.P.Clark, C.P.Hains, T.J.Rotter, L.M.Phinney, G.Balakrishnan: Applied Physics Letters, 2011, 98[16], 161913