The dissolution of interstitial-type end-of-range damage in pre-amorphized Ge was shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350C that saturates above 420C. The B diffusion events were quantitatively correlated with the measured positive strain associated with the end-of-range damage as a function of the annealing temperature with an energy barrier for the end-of-range damage dissolution of 2.1eV. These results unambiguously demonstrated that B diffused in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modelling of impurity diffusion in Ge.

Transient Enhanced Diffusion of B Mediated by Self-Interstitials in Preamorphized Ge. E.Napolitani, G.Bisognin, E.Bruno, M.Mastromatteo, G.G.Scapellato, S.Boninelli, D.De Salvador, S.Mirabella, C.Spinella, A.Carnera, F.Priolo: Applied Physics Letters, 2010, 96[20], 201906