Hall effect measurements demonstrated that quenching of Ge1-xSix 〈Cu,In,Sb〉 (0 ≤ x ≤ 0.20) multiply doped crystals from 1050 to 1080K led to the formation of additional deep donor centers. The energy level of the centers was located in the bottom half of the band gap of the Ge1−xSi x crystals and was a linear function of host composition. Annealing the crystals at 550–570K completely eliminated the . additional donor levels. The most likely model of the additional deep donors was a pair of substitutional copper and indium atoms (CusIns) or a complex of a copper interstitial and a substitutional indium atom (CuiIns).

Deep Donor Center in Ge1-xSix<Cu,In,Sb> Crystals at 1050–1080K. G.K.Azhdarov, Z.M.Zeynalov, V.K.Kyazimova, L.A.Huseynli: Inorganic Materials, 2010, 46[12], 1285-9