The electrical and structural properties of <111>B-oriented InAs nanowires grown using metal–organic precursors were studied. On the basis of electrical measurements it was found that the trends in carbon incorporation were similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. The results also showed that the effect of non-intentional carbon doping was weaker in InAs nanowires compared to bulk, which could be explained by lower carbon incorporation into the nanowire core. It was determined that differences in crystal quality, here quantified as the stacking fault density, were not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also led to enhanced radial overgrowth. Use of the Se precursor increased the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zincblende crystal structure with strong overgrowth and very low resistivity.

The Electrical and Structural Properties of n-Type InAs Nanowires Grown from Metal–Organic Precursors. C.Thelander, K.A.Dick, M.T.Borgström, L.E.Fröberg, P.Caroff, H.A.Nilsson, L.Samuelson: Nanotechnology, 2010, 21[20], 205703