An investigation was made of the structural properties and relaxation phenomena of InGaN multiple quantum wells on (1¯1•1) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. The transmission electron microscopic and X-ray diffraction reciprocal space mapping studies revealed that quantum wells emitting light at 540nm experienced significant strain relaxation along the in-plane [1¯1•¯2] direction by the generation of an array of basal stacking faults. The generation of basal stacking faults in 540nm quantum wells could be an important factor limiting its luminescence efficiency.

Partial Strain Relaxation by Stacking Fault Generation in InGaN Multiple Quantum Wells Grown on (1¯101) Semipolar GaN. Z.H.Wu, T.Tanikawa, T.Murase, Y.Y.Fang, C.Q.Chen, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki: Applied Physics Letters, 2011, 98[5], 051902