Light-emitting structures with InGaN/GaN multiple quantum wells were studied in the electron beam induced current mode of a scanning electron microscope. Special attention was paid to the channels of enhanced carrier transport across the active region demonstrating bright electron beam induced current contrast. Defects with the smallest bright contrast were associated with threading dislocations while the large defects present in lower density could be associated with dislocation bunches. Low energy (10keV) electron beam irradiation in the scanning electron microscope was found to suppress the bright electron beam induced current contrast of these . defects. A comparison with the cathodoluminescence spectra changes due to similar exposure allowed it to be assumed that recombination-enhanced diffusion was responsible for the observed effects.

EBIC Investigation of InGaN/GaN Multiple Quantum Well Structures Irradiated with Low Energy Electrons. P.S.Vergeles, E.B.Yakimov: Journal of Physics - Conference Series, 2011, 281[1], 012013