A Poisson, drift-diffusion and Schrodinger solver, coupled with the Monte Carlo method, were applied to the study of the in-plane carrier dynamics in the InGaN c-plane and non-polar plane quantum well light-emitting diode device. Carrier diffusion, scattering, radiative recombination, and trapping by dislocation defects in the quantum well were studied. The impact of carrier dynamics on the internal quantum efficiency in the quantum well with different indium compositions, dislocation densities, polarization effect, and interface roughness was studied. The results showed that (for dislocations densities in typical devices) due to the large radiative lifetime from the quantum confined Stark effect, non-radiative recombination caused by the dislocation defects played a dominated role in limiting the internal quantum efficiency. In the non-polar quantum well, the internal quantum efficiency was much better than in the c-plane case but was still strongly influenced by dislocation density. The results showed that to achieve 100% internal quantum efficiency, the dislocation density levels need to be lower than 106 and 107/cm2 for c-plane and non-polar plane InGaN quantum well, respectively. The results were also compared with published experimental work and showed good agreement.

A Study of the Role of Dislocation Density, Indium Composition on the Radiative Efficiency in InGaN/GaN Polar and Nonpolar Light-Emitting Diodes using Drift-Diffusion Coupled with a Monte Carlo Method. I.L.Lu, Y.R.Wu, J.Singh: Journal of Applied Physics, 2010, 108[12], 124508