Transmission electron microscopic studies were made of long wavelength (1¯1•0) m-plane GaN light-emitting diodes series and m-plane GaN laser diodes grown on high quality bulk GaN substrates. I1 basal plane stacking faults form in the high In content InxGa1−xN quantum wells (x ∼0.26) for thicker wells. The I1 faults were bounded by sessile Frank–Shockley partial dislocations that likely limit the radiative efficiency of long wavelength m-plane emitters.

Stacking Fault Formation in the Long Wavelength InGaN/GaN Multiple Quantum Wells Grown on m-Plane GaN. F.Wu, Y.D.Lin, A.Chakraborty, H.Ohta, S.P.DenBaars, S.Nakamura, J.S.Speck: Applied Physics Letters, 2010, 96[23], 231912