Surface/interface segregation of indium in InGaP layers grown by metal-organic vapour phase epitaxy was studied. Al/InGaP Schottky barrier height (ΦB) measurement was used for the evaluation of the segregation. It was shown that ΦB of GaAs/InGaP/GaAs double heterostructure was larger than that of InGaP/GaAs single heterostructure, suggesting the diffusion of indium into upper GaAs layer. It was shown that the indium segregation progresses at the initial stage of InGaP . growth and saturates when the InGaP thickness reaches about 15nm. Using the segregation model, the exchange coefficient of indium was calculated to be 0.76 at 620C.

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement. O.Ichikawa, N.Fukuhara, M.Hata, T.Nakano, M.Sugiyama, Y.Nakano, Y.Shimogaki: Japanese Journal of Applied Physics, 2011, 50[1], 011201