An investigation was made of the selective-area growth of InN by rf-plasma-assisted molecular-beam epitaxy using molybdenum-mask-patterned sapphire (00•1) substrates, which resulted in the formation of regularly arranged N-polar InN microcrystals. Transmission electron microscopy observation confirmed that the laterally grown side areas were nearly dislocation-free, although many threading dislocations (109 to 1010/cm2) were generated at the InN/sapphire interface and propagated into the center of the InN microcrystals along the crystal c-axis. The laterally grown InN microcrystals exhibited narrow near-IR emission spectra with a peak photon energy of 0.627eV and a line-width of 39meV at room temperature.

Dislocation Reduction via Selective-Area Growth of InN Accompanied by Lateral Growth by rf-Plasma-Assisted Molecular-Beam Epitaxy. J.Kamimura, K.Kishino, A.Kikuchi: Applied Physics Letters, 2010, 97[14], 141913