A study was made of the Raman scattering of InN epilayers after rapid thermal annealing. The longitudinal optical phonon in Raman spectrum shifts toward lower frequency and increased asymmetrical broadening as the rapid thermal annealing temperature was increased. It was suggested that the formation of indium-related defects, such as metallic indium clusters or indium vacancies, were responsible for the change in the asymmetrical ratio in the longitudinal optical mode. The E2 (high) mode in the Raman spectrum did not exhibit significant change after rapid thermal annealing since the indium atom did not involve the E2 (high) mode.

Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers. M.D.Yang, S.C.Tong, I.T.Chou, G.W.Shu, J.L.Shen, Y.C.Lee, Y.S.Huang, Y.F.Chen, T.Y.Lin: Japanese Journal of Applied Physics, 2010, 49[10], 105803