Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP was shown. During studying of the nanostructure of porous layers, the features of mechanisms of pore formation in the n-InP samples were established. It was shown that they were caused by outcrop of dislocations on the (111) surface and pore growth both along the surface and perpendicularly to it. The dislocation density in the places of an increased impurity concentration was calculated.

Influence of Dislocations on the Process of Pore Formation in n-InP (111) Single Crystals. Y.A.Suchikova, V.V.Kidalov, G.A.Sukach: Semiconductors, 2011, 45[1], 121-4