The extended finite element method was combined with simulations of diffracted X-ray intensities in order to investigate the diffusely scattered intensity due to dislocations. As a model system a thin PbSe epitaxial layer grown on top of a PbTe buffer on a CdTe substrate was chosen. The PbSe film showed a periodic dislocation network where the dislocations run along the orthogonal <110> directions. The array of dislocations within this layer could be described by a short range order model with a narrow distribution.

Analysis of Periodic Dislocation Networks using X-Ray Diffraction and Extended Finite Element Modeling. E.Wintersberger, N.Hrauda, D.Kriegner, M.Keplinger, G.Springholz, J.Stangl, G.Bauer, J.Oswald, T.Belytschko, C.Deiter, F.Bertram, O.H.Seeck: Applied Physics Letters, 2010, 96[13], 131905