A study was made of boron diffusion gettering of iron in single crystalline silicon. The results showed that iron was gettered efficiently by electrically inactive boron, which led to gettering efficiencies comparable to phosphorus diffusion gettering. The various physical mechanisms behind boron diffusion gettering were also considered. Also considered were the possibilities of using boron diffusion gettering in solar cell fabrication and the role of boron and iron concentration in the optimization of gettering efficiency.

Physical Mechanisms of Boron Diffusion Gettering of Iron in Silicon. V.Vähänissi, A.Haarahiltunen, H.Talvitie, M.Yli-Koski, J.Lindroos, H.Savin: Physica Status Solidi - Rapid Research Letters, 2010, 4[5-6], 136–8