Ion-beam induced hydrogen migration was studied in triple layer structures, a-Si/a-Si:H/a-Si and SiO2/a-Si:H/SiO2. Nuclear reaction analysis was used for simultaneous irradiation with MeV ions and measurement of hydrogen distribution in the structures. It was established that there was no hydrogen loss from SiO2/a-Si:H/SiO2 structures, but an asymmetric redistribution due to hydrogen penetration into the bottom SiO2 layer. Hydrogen loss was observed from the a-Si/a-Si:H/a-Si structures. The inspection of the surface of these samples by means of atomic force microscope has shown that it proceeds by bubble formation and blistering at the inner interface. The observed ion-beam induced selective penetration of hydrogen into the underlying material could be used as a tool for preparation of microcavity and microchannel arrays.

Ion-Beam Induced Hydrogen Redistribution in a-Si:H-Based Triple Layer Structures. B.Pantchev, P.Danesh, B.Schmidt, D.Grambole, L.Bischoff: Journal of Physics - Conference Series, 2010, 253[1], 012055