It was reported that Si+ self-ion-implantation was conducted on silicon-on-insulator wafers to 28Si+ doses of 7 x 1012, 1 x 1013, 4 x 1013 and 3 x 1014/cm2. After the suitable annealing, these samples were characterized by using the photoluminescence technique at different recorded temperatures. Plentiful emission peaks were observed in these implanted silicon-on-insulator samples, including the unwonted intense P' band which exhibits a great potential in the optoelectronic application. These results indicated that severe transformation of the interstitial clusters could be manipulated by the implanting dose at suitable annealing . temperatures. The high critical temperatures for the photoluminescence intensity growth of the two signatures were closely considered, based upon the thermal ionization model of free excitons.

Study on the Defect-Related Emissions in the Light Self-Ion-Implanted Si Films by a Silicon-on-Insulator Structure. C.Wang, Y.Yang, R.D.Yang, L.Li, F.Xiong, J.M.Bao: Chinese Physics B, 2011, 20[2], 026802