Defect formation processes in silicon implanted with ∼1 MeV/nucleon boron, oxygen, and argon ions were studied using microhardness and Hall effect measurements. The results indicated that ion implantation increased the surface strength of silicon single crystals owing to the formation of electrically inactive interstitials through the diffusion of self-interstitials from the implantation-damaged layer to the silicon surface. The radiation-induced surface hardening depended significantly on the nature of the ion, its energy, and the implant dose. In the case of low-Z (boron) ion implantation, the effect had a maximum at an implant dose of ∼5 x 1014/cm2, whereas that for O+ and Ar+ ions showed no saturation even at the highest dose reached, 1 x 1016/cm2. When the ion energy was increased to ∼3MeV/nucleon (210MeV Kr+ ion implantation), the opposite effect was observed: surface strength loss, due to the predominant generation of vacancy-type defects.

Defect Formation in Silicon Implanted with ∼1 MeV/Nucleon Ions. S.A.Vabishchevich, N.V.Vabishchevich, D.I.Brinkevich, V.S.Prosolovich, Y.N.Yankovskii: Inorganic Materials, 2010, 46[12], 1281-4