A study was made, of the dislocation network that occurred in the space charge region of a Schottky diode, by means of deep level transient spectroscopy and a recently developed cathodoluminescence technique termed pulsed- cathodoluminescence. The details of the pulsed-cathodoluminescence technique were provided. A correspondence was established between the cathodoluminescence spectra of dislocation-related luminescence in silicon in the vicinity of the so-called D1 band and levels determined from deep level transient spectroscopy measurements. The centres responsible for the 815meV cathodoluminescence component were related to dislocation cores while the centres responsible for the 795meV cathodoluminescence component were related to defects outside of the dislocation cores.

Identification of Dislocation-Related Luminescence Participating Levels in Silicon by DLTS and Pulsed-CL Profiling. A.Bondarenko, O.Vyvenko, I.Isakov: Journal of Physics - Conference Series, 2011, 281[1], 012008