Dislocation structures produced at room temperature under confining pressure (5GPa) were investigated by transmission electron microscopy and photoluminescence. Following annealing treatments in the temperature range 300C – 600C the initial DRL spectrum changed to a well-known spectrum of dislocation luminescence of dissociated glide set dislocations. In spite of the fact that no transformation of perfect shuffle dislocations to dissociated glide ones was observed by transmission electron microscopy, experimental photoluminescence data analysis did not exclude the possibility either of such transformation or nucleation of glide dislocations following annealing treatments at temperature as low as 300C.

Radiation Properties of Dislocations Created by Plastic Deformation of Si under High Pressure and Low Temperature. A.N.Tereshchenko, E.A.Steinman, J.Rabier: Journal of Physics - Conference Series, 2011, 281[1], 012020