The brittle-to-ductile transition in boron, antimony and arsenic doped Cz silicon crystals was experimentally studied. The brittle-to-ductile transition temperatures in antimony and arsenic doped silicon wafers were lower than that in a non-doped wafer while the brittle-to-ductile transition temperature in a boron doped wafer was almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the brittle-to-ductile transition temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers were lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon was faster than that in the non-doped while the dislocation velocity in the boron doped was the same as that in the non-doped. The effect of increasing in dislocation velocity on the brittle-to-ductile transition temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreased the brittle-to-ductile transition . temperature in silicon single crystals.

The Effect of Dopants on the Brittle-To-Ductile Transition in Silicon Single Crystals. Y.J.Hong, M.Tanaka, K.Maeno, K.Higashida: Journal of Physics - Conference Series, 2010, 240[1], 012141