The results of a theoretical calculation of the Poole-Frenkel effect due to the strain field of screw and 60° dislocations upon the valence band in silicon, and of a detailed deep level transient spectroscopy study of the electrical field impact on carrier emission from the dislocation-related states of two types of bonded samples were presented. A good agreement between the theory and experiment was established. It was concluded that the large Poole-Frenkel coefficient value that significantly exceeds the value for a Coulomb-like potential was a new distinguishing feature of the hole thermo-emission from dislocation-related levels in silicon.

Giant Poole-Frenkel Effect for the Shallow Dislocation-Related Hole Traps in Silicon. M.Trushin, O.Vyvenko, V.Vdovin, M.Kittler: Journal of Physics - Conference Series, 2011, 281[1], 012009