The results of deep level transient spectroscopy and minority carrier transient spectroscopic investigations on directly bonded n- and p-type silicon wafers with small twist misorientation angles ranging from 1 to 5 degrees were presented. Both shallow and deep levels in the upper half of a band gap were found and a good correspondence between the deep level transient spectroscopy and minority carrier transient spectroscopic data on n- and p-type samples was established. The dependence of deep level transient spectroscopy-peak magnitude on twist and tilt misorientation angles (density of dislocations) was investigated and the origin of different levels was suggested.

Electrical Levels of Dislocation Networks in p- and n-Type Si. I.Isakov, A.Bondarenko, O.Vyvenko, V.Vdovin, E.Ubyivovk, O.Kononchuk: Journal of Physics - Conference Series, 2011, 281[1], 012010