The n- and p-type polished Czochralski-grown Si (Cz-Si) and p-type polished and as-cut multi-crystalline (mc) Si wafers were directly H plasma treated in a plasma enhanced chemical vapour system in order to study H subsurface defect formation. Raman spectroscopy, secondary ion mass spectroscopy, scanning electron microscopy and transmission electron microscopy were used to characterise the samples. In polished Cz-Si wafers, H induced defects were only observed up to 1 μm below the surface, while in similarly treated mc samples H induced defects were observed on grain boundaries and dislocations up to several μm below the surface. It was also established that the distribution of H in the sub-surface regions of the Cz-Si substrates after hydrogenation as well as the formation of structural . defects depended upon the type of doping. Evolution of Si-Hx bonds in hydrogenated Cz Si samples starts at 400C, while evolution of H initiated structural defects starts at 600C, when SiHx bonds were mostly dissolved.

H-Initiated Extended Defects from Plasma Treatment: Comparison between c-Si and mc-Si. H.Nordmark, A.G.Ulyashin, J.C.Walmsley, R.Holmestad: Journal of Physics - Conference Series, 2011, 281[1], 012029