The brittle-to-ductile transition in boron or antimony doped Czochralski silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different crosshead speeds, indicating that the brittle-to-ductile transition temperature in boron doped silicon was the same as that in non-doped one while the brittle-to-ductile transition temperature in antimony doped silicon was lower than that in non-doped one. The activation energy was obtained from the deformation rate dependence of the brittle-to-ductile transition temperature, suggesting that the dislocation velocity in boron doped silicon was the same as that in non-doped while the dislocation velocity in antimony doped was larger than that in non-doped one.

The Effect of Boron/Antimony on the Brittle-to-Ductile Transition in Silicon Single Crystals . M.Tanaka, K.Maeno, K.Higashida: Materials Transactions, 2010, 51[7], 1206-9

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