It was found that a shuffle-set dislocation was nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transformed into a dissociated glide-set dislocation after annealing at 500C. A possible mechanism for the nucleation of a perfect shuffle-set dislocation during thermal processing was that the dislocation nucleus was nucleated at a low temperature during prior ion-implantation processing.

Shuffle-Set Dislocation Nucleation in Semiconductor Silicon Device. S.Izumi, H.Ohta, C.Takahashi, T.Suzuki, H.Saka: Philosophical Magazine Letters, 2010, 90[10], 707-14