Non-decorated glide dislocations in Czochralski grown silicon were studied by laser scattering tomography technique. Dependence of intensity of scattered light on polarization of the incident light was measured for different orientations of the dislocation line and Burgers vector. Detailed theory of light scattering by dislocation in silicon crystals was presented. It was shown that by combination of polarization and tomography measurements it was possible to determine slip system of non-decorated mixed dislocation in Si.

Light Scattering from Dislocations in Silicon. V.Monier, L.Capello, O.Kononchuk, B.Pichaud: Journal of Applied Physics, 2010, 108[9], 093525