The investigation of the grain structure was important to understand the origin of dislocations during crystal growth of multicrystalline silicon. This paper studies the dislocation density distribution for different grain orientations that occurred during crystal growth. Single grains were analyzed in detail, including their microstructure. The grain orientations were determined by means of the electron backscatter diffraction technique. The obtained information revealed grain orientations, which allowed a higher number of active slip planes during crystal growth process. The number of active slip planes during solidification seemed to influence the dislocation density in the final crystal.

The Relationship between Microstructure and Dislocation Density Distribution in Multicrystalline Silicon. S.Würzner, R.Helbig, C.Funke, H.J.Möller: Journal of Applied Physics, 2010, 108[8], 083516