A high-quality as-grown PbSe film with a record low threading dislocation density of 9 x 105/cm2 on patterned Si(111) substrate was obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density were analyzed. Based on the analysis, further reduction in dislocation density was anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.

Elimination of Threading Dislocations in As-Grown PbSe Film on Patterned Si(111) Substrate using Molecular Beam Epitaxy. B.Weng, F.Zhao, J.Ma, G.Yu, J.Xu, Z.Shi: Applied Physics Letters, 2010, 96[25], 251911