A phase diagram was constructed for silicon layer growth on (001) Si by hot-wire chemical vapour deposition, for rates of 10 to 150nm/min and for substrate temperatures of 500 to 800C. The results showed that mixed mono and dihydride surface termination during growth caused polycrystalline growth; some H-free sites were needed for epitaxy. For epitaxial films (T>620C), the dislocation density decreased with increasing growth temperature because of reduced O contamination of the surface. The best hot-wire chemical vapour deposition epitaxial layers had  dislocation densities of 105/cm2.

Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800C. C.W.Teplin, K.Alberi, M.Shub, C.Beall, I.T.Martin, M.J.Romero, D.L.Young, R.C.Reedy, P.Stradins, H.M.Branz: Applied Physics Letters, 2010, 96[20], 201901