Calculations were used to investigate the influence of the thermal conductivity of the crucible wall upon thermal stresses and dislocations, in a silicon ingot during solidification, using a three-dimensional global analysis. It was found that the m–c interface shape and the temperature gradient in a silicon ingot had a significant influence upon thermal stresses and dislocations, due to the differing thermal conductivity of the crucible wall. Therefore, it was necessary to control not only the m–c interface shape, but also the temperature gradient, in a silicon ingot in order to reduce thermal stresses and dislocations in a silicon ingot during solidification.

3D Numerical Analysis of the Influence of Material Property of a Crucible on Stress and Dislocation in Multicrystalline Silicon for Solar Cells. X.J.Chen, S.Nakano, K.Kakimoto: Journal of Crystal Growth, 2011, 318[1], 259-64