Results obtained in development of physical foundations of ion implantation technology for fabrication of silicon light-emitting structures based upon dislocation-related luminescence and intended for operation at wavelengths close to ∼1.6μm were summarized. The development of the concept of defect engineering in the technology of semiconductor devices made it possible to determine the fundamental aspects of the process of defect formation; revealed specific features of the emission spectra related to changes in the implantation conditions of Er, Dy, Ho, O, and Si ions and the subsequent annealing; and design light-emitting structures with a desirable spectrum of luminescent centers and extended structural defects. The technological conditions in which only a single type of extended structural defect (Frank loops, perfect prismatic loops, or pure edge dislocations) was introduced into the light-emitting layer were found, which enables analysis of the correlation between the concentration of extended defects of a certain type and the intensity of lines of the dislocation-related luminescence. The key role of intrinsic point lattice defects in the origination and transformation of extended structural defects and luminescent centers responsible for the dislocation-related luminescence was revealed. It was found that the efficiency of luminescence excitation from the so-called D1 centers, which were of particular interest for practical applications, varies by more than two orders of magnitude between structures fabricated using different technological procedures. High-efficiency silicon light-emitting diodes with room-temperature dislocation-related luminescence were fabricated.

Defect Engineering in Implantation Technology of Silicon Light-Emitting Structures with Dislocation-Related Luminescence. N.A.Sobolev: Semiconductors, 2010, 44[1], 1-23