A new technology of formation of dislocation dissipative structures in undoped and doped semi-conductor crystals by the combined deformation, which made it possible to control their elastoplastic properties, was suggested. New macroplastic properties of these crystals were found. From the obtained compression diagrams, various strain parameters were determined and surface microstructures of the obtained deformed samples were investigated. Possible physical explanations were proposed for the observed phenomenon.

Electroplasticity of Undoped and Doped Silicon. A.R.Velikhanov: Semiconductors, 2010, 44[2], 137-40