A novel method, which permitted rapid photoluminescence imaging of band-to-band and dislocation-related radiation, D1, for multicrystalline silicon wafers at room temperature, was repored. Spatially resolved 5.0cm  x  5.0cm D1-images were demonstrated, with a resolution of ∼120µm within a total recording time of 550ms. The method provided homogeneous illumination over the entire sample area. Comparison with results from a conventional photoluminescence mapping technique demonstrated the potential of this new method for use as an in-line wafer characterization technique.

Rapid Dislocation-Related D1-Photoluminescence Imaging of Multicrystalline Si Wafers at Room Temperature. R.P.Schmid, D.Mankovics, T.Arguirov, M.Ratzke, T.Mchedlidze, M.Kittler: Physica Status Solidi A, 2011, 208[4], 888–92