The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high-voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} .interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrated that the {113} interstitial cluster could not grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, were proposed. Then, experimental results were analyzed using rate equations based on these kinetics.

Effect of Impurities on the Growth of {113} Interstitial Clusters in Silicon under Electron Irradiation. K.Nakai, K.Hamada, Y.Satoh, T.Yoshiie: Philosophical Magazine, 2011, 91[3], 421-36