Defect generation was usually predicted by using the V/G (where V was growth rate and G was axial temperature gradient at the interface of melt/solid) theory, but it was hard to get appropriate critical V/G value and the value could not show the distribution of grown-in defects. Otherwise, direct defect simulation was a very useful method of interpreting initial point defect behavior and micro-void generation. Here, direct defect simulations were preformed with variable process parameters and optimized by comparing with experiment results. With optimized direct defect analysis, the critical V/G value was modified as 0.00155cm2/minK. The critical pulling rate range was defined as that has low residual point defect . concentration in silicon crystal, thus a high-quality wafer could be obtained at the critical pulling rate. The initial point defect distribution and the critical pulling rate range were analyzed by using direct defect model. Additionally, the generation of micro void density was also calculated with variable pulling rates and compared with experiment results. In this research, the initial point defect incorporation and the tendency of micro void generation were well explained by using direct defect model.

Modeling of Defects Generation in 300mm Silicon Monocrystals during Czochralski Growth. S.H.Lee, D.W.Song, H.J.Oh, D.H.Kim: Japanese Journal of Applied Physics, 2010, 49[12], 121303