Single crystals for 300mm wafer were grown by horizontal magnetic Czochralski method. 300mm wafers were made from the vertical samples cut from crystal along ingot axial direction. Micro-defects in various defect regions were investigated with various measurement methods. In order to investigate the size of the defects, the locations of defects were identified, the wafers with the defects were cut in cross-sectional direction, and the sizes of the defects were measured by transmission electron microscopy. Voids of more than 20nm in size existed in vacancy-rich regions. Any as-grown defect was not observed by any available measurement tools in the region having nuclei of oxidation-induced stacking fault (P-band), pure silicon in a vacancy-dominant crystal region (Pv), and pure silicon in an interstitial-silicon-dominant crystal region (Pi). High sensitive laser scattering tomography system with the detection limit of 20nm in size was used to investigate as-grown defects in P-band, Pi, and Pv regions. It was concluded that there were no as-grown defects more than 20nm size in P-band, Pi, and Pv regions.

Micro Defect Size in Si Single Crystal Grown by Czochralski Method. B.S.Moon, B.C.Sim, J.G.Park: Japanese Journal of Applied Physics, 2010, 49[12], 121301