Iron films were deposited onto the Si (100) substrates by DC-magnetron sputtering and subsequently annealed in the temperature range of 873 to 1273K for 2h. Rutherford back-scattering analysis was performed to determine the elemental depth profiles and the oxidation process in samples. The silicides formation was characterized by X-ray diffraction. The results indicated that annealing at 873K causes only a small mixing of the Fe and Si atoms near the Fe/Si interface, while the 973K annealing enhances the atomic diffusion and yields to a graded concentration distribution of Fe and Si. The metal-rich silicides Fe1+xSi (0≤x≤2) started to nucleate and grew at 973K and only α- FeSi2 formation occurred after annealing (1273K, 2h).

Atomic Diffusion in the Interface of Fe/Si Prepared by Magnetron Sputtering. J.Zhang, Q.Xie, Y.Liang, W.Zeng, Q.Xiao, Q.Chen, V.Borjanović, M.Jakšić, M.Karlusic, B.Gržeta, K.Yamada, J.Luo: Physics Procedia, 2011, 11, 126-9