The effect of the buried Si–SiO2 interface on the transient enhanced diffusion of boron in silicon on insulator structures was investigated. To this purpose, boron marker layers were grown by chemical vapour deposition on Si and SOI substrates and implanted under non-amorphizing conditions with 40keV Si+ ions. The experimental results clearly confirmed that the Si–SiO2 interface was an efficient trap for the Si interstitial atoms diffusing out of the defect region. Based on these experiments, existing models for the simulation of B transient enhanced diffusion in silicon were modified to include an additional buried recombination site for silicon interstitials. The simulation results provided an upper limit of ∼5nm for the recombination length of interstitials at the Si–SiO2 interface.

Modeling of the Effect of the Buried Si–SiO2 Interface on Transient Enhanced Boron Diffusion in Silicon on Insulator. E.M.Bazizi, P.F.Fazzini, A.Pakfar, C.Tavernier, B.Vandelle, H.Kheyrandish, S.Paul, W.Lerch, F.Cristiano: Journal of Applied Physics, 2010, 107[7], 074503