Nanometric 3C SiC layers (~40nm) between amorphous zones, i.e. SiO2/SiC/SiO2/Si, were obtained using separation by implantation of oxygen structures on bulk Si(111) as the starting material, i.e. Si(65nm)/SiO2/Si(111) structures. Mechanisms of carbon redistribution in the starting 65nm silicon overlayer upon SiC ion beam synthesis were reported. Sequential C implantation steps (sample held at 600C), with 1250C annealing in between, permitted the monitoring of the evolution of the carbon composition (before and after annealing) in the silicon overlayer under conversion upon increasing the implantation fluence. Rutherford back-scattering spectrometry and transmission electron microscopy revealed a two-sublayer structure of about the same thickness for the layer under conversion. The composition evolution of the sub-layers (Si1−xCx) was monitored by evaluating Si composition changes measured by Rutherford back-scattering spectrometry analysis. High-resolution transmission electron microscopy revealed major differences in the structural quality of sub-layers. It was suggested that the observed structural differences were the main driving force for the observed C migration.

Carbon Redistribution in Nanometric Si1−xCx Layers upon Ion Beam Synthesis of SiC by C Implantation into SIMOX(111). R.M.S.dos Reis, R.L.Maltez, H.Boudinov: Journal of Physics D, 2010, 43[39], 395401