The pinning of recombination-enhanced dislocation motion in 4H–SiC by the implantation of Cu was reported. The Cu was found to be preferentially gettered at basal-plane dislocations. Both EH1 and Z1/2 centers were detected in 4H–SiC by cathodoluminescence. It was noticed that the EH1 had a high luminescence intensity at the central part of the basal plane dislocations, while the Z1/2 did not. A complex of Cu and EH1 was regarded as being the cause of the pinning effect.

Pinning of Recombination-Enhanced Dislocation Motion in 4H–SiC: Role of Cu and EH1 Complex. B.Chen, H.Matsuhata, T.Sekiguchi, T.Ohyanagi, A.Kinoshita, H.Okumura: Applied Physics Letters, 2010, 96[21], 212110