The dislocation behavior in C-face 4H-SiC homo-epitaxial films was studied by using electron-beam-induced current technique and was compared with that in Si-face ones. For the basal-plane dislocations with the same line shape appearing in the electron-beam-induced current images, the mobile partial dislocations originated from the dissociation of such basal-plane dislocations moved in two opposite directions, while they moved in one direction in the Si-face samples. The difference of the partial dislocation movement between two faces was considered

Comparison of Dislocation Behavior in Si- and C-Face 4H-SiC. B.Chen, H.Matsuhata, T.Sekiguchi, T.Ohyanagi, A.Kinoshita, H.Okumura: Physica Status Solidi C, 2011, 8[4], 1278–81